ZhETF, Vol. 69,
No. 3,
p. 990 (October 1975)
(English translation - JETP,
Vol. 42,
No. 3,
p. 503,
October 1975
)
The issue content is only available in english translation.
Concerning the mechanism of formation of the diode effect in silicon under the influence of an individual dislocation
V.G. Eremenko, V.I. Nikitenko, A.B. Yakimov
Received: March 24, 1975
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