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JETP, Vol. 42, No. 3, p. 503 (October 1975)
(Russian original - ZhETF, Vol. 69, No. 3, p. 990, October 1975 )

Concerning the mechanism of formation of the diode effect in silicon under the influence of an individual dislocation
V.G. Eremenko, V.I. Nikitenko, A.B. Yakimov

Received: March 24, 1975

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