ЖЭТФ, Том 148,
Вып. 2,
стр. 299 (Август 2015)
(Английский перевод - JETP,
Vol. 121, No 2,
p. 259,
August 2015
доступен on-line на www.springer.com
)
INVESTIGATION OF LOCAL TUNNELING CURRENT NOISE SPECTRA ON THE SILICON CRYSTAL SURFACES BY MEANS OF STM/STS
Mantsevich V.N., Maslova N.S., Cao G.Y.
Поступила в редакцию: 5 Декабря 2014
DOI: 10.7868/S004445101508012X
We report on a careful analysis of the local tunneling conductivity by means of ultra-high vacuum scanning tunneling microscopy/spectroscopy (STM/STS) technique in the vicinity of low-dimensional structures on the Si(111)- and Si(110)- surfaces. The power-law exponent α of low-frequency tunneling current noise spectra is investigated for different values of the tunneling contact parameters: relaxation rates, the localized state coupling, and the tunneling barrier width and height.
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