ZhETF, Vol. 148,
p. 299 (August 2015)
(English translation - JETP,
Vol. 121, No. 2,
available online at www.springer.com
INVESTIGATION OF LOCAL TUNNELING CURRENT NOISE SPECTRA ON THE SILICON CRYSTAL SURFACES BY MEANS OF STM/STS
Mantsevich V.N., Maslova N.S., Cao G.Y.
Received: December 5, 2014
We report on a careful analysis of the local tunneling conductivity by means of ultra-high vacuum scanning tunneling microscopy/spectroscopy (STM/STS) technique in the vicinity of low-dimensional structures on the Si(111)- and Si(110)- surfaces. The power-law exponent α of low-frequency tunneling current noise spectra is investigated for different values of the tunneling contact parameters: relaxation rates, the localized state coupling, and the tunneling barrier width and height.