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Search publications of "Yu. A. Osip'yan"
Found 26 record(s)

1. Electron Paramagnetic Resonance of Dislocations in Silicon

V.A. Grazhulis, Yu. A. Osip'yan
JETP, 1971, Vol. 33, No. 3, p. 623

PDF (958.4K)

2. Effect of Dislocations on the Electrical Properties of Germanium

Yu. A. Osip'yan, S.A. Shevchenko
JETP, 1972, Vol. 34, No. 6, p. 1248

PDF (525.7K)

3. Exciton Scattering by Dislocations in the CdSe Crystal

Yu. A. Osip'yan, V.B. Timofeev, G.A. Shteinman
JETP, 1972, Vol. 35, No. 1, p. 146

PDF (564.2K)

4. Effect of Dislocations on the Electric Properties of Indium Antimonide

Yu. A. Osip'yan, Yu. I. Fedyaev, S.A. Shevchenko
JETP, 1968, Vol. 27, No. 6, p. 916

PDF (718.1K)

5. lnvestigation of the properties of the dislocation EPR spectra in silicon

S.V. Broude, V.A. Grazhulis, V.V. Kveder, Yu. A. Osip'yan
JETP, 1974, Vol. 39, No. 4, p. 721

PDF (230.3K)

6. Nature of the Photoplastic Effect

Yu. A. Osip'yan, V.F. Petrenko
JETP, 1973, Vol. 36, No. 5, p. 916

PDF (212.8K)

7. Short-circuit effect in plastic deformation of ZnS and motion of charged dislocations

Yu. A. Osip'yan, V.F. Petrenko
JETP, 1975, Vol. 42, No. 4, p. 695

PDF (252.9K)

8. Electric conductivity and Hall effect in silicon single crystals with dislocations

V.A. Grazhulis, V. Yu. Mukhina, Yu. A. Osip'yan, S.A. Shevchenko
JETP, 1975, Vol. 41, No. 6, p. 1076

PDF (307.1K)

9. Effect of light on strain-stimulated light emission in ZnS crystals

S.I. Bredikhin, Yu. A. Osip'yan, S.Z. Shmurak
JETP, 1975, Vol. 41, No. 2, p. 373

PDF (223.6K)

10. Effect of dislocations on the electric properties of p-germanium

Yu. A. Osip'yan, S.A. Shevchenko
JETP, 1974, Vol. 38, No. 2, p. 345

PDF (173.1K)

11. Dislocation-state spectrum in semiconductors

Yu. A. Osip'yan, I.A. Ryzhkin
JETP, 1980, Vol. 52, No. 3, p. 489

PDF (381.5K)

12. Investigation of the mechanism of the motion of charged dislocations in ZnSe

Yu. A. Osip'yan, V.F. Petrenko
JETP, 1978, Vol. 48, No. 1, p. 147

PDF (316.3K)

13. Dislocation microwave conductivity of germanium

Yu. A. Osip'yan, V.I. Tal'yanskii, S.A. Shevchenko
JETP, 1977, Vol. 45, No. 4, p. 810

PDF (206.3K)

14. Microwave conductivity of n-type germanium with dislocations

Yu. A. Osip'yan, V.I. Tal'yanskii, A.A. Kharlamov, S.A. Shevchenko
JETP, 1979, Vol. 49, No. 5, p. 840

PDF (182.6K)

15. Temperature dependence of conduction by reconstructed dislocations in silicon and nonlinear effects

V.V. Kveder, A.E. Koshelev, T.R. Mchelidze, Yu. A. Osip'yan, A.I. Shalynin
JETP, 1989, Vol. 68, No. 1, p. 104

PDF (212.8K)

16. Quantum and dissipative effects in dislocation dynamics

R.A. Vardanyan, Yu. A. Osip'yan
JETP, 1988, Vol. 67, No. 8, p. 1682

PDF (332K)

17. Optical polarization contrast and twin-domain structure of high-temperature superconductor single crystals

D.E. Batova, V.K. Vlasko-Vlasov, V.A. Goncharov, G.A. Emel'chenko, M.V. Indenbom, Yu. A. Osip'yan
JETP, 1988, Vol. 67, No. 11, p. 2376

PDF (537.3K)

18. Combined electron resonance in a one-dimensional dislocation band

V.V. Kveder, T.R. Mchedlidze, Yu. A. Osip'yan, A.I. Shalynin
JETP, 1987, Vol. 66, No. 4, p. 838

PDF (234.9K)

19. Spin-dependent change in the rf photoconductivity of silicon crystals containing dislocations

V.V. Kveder, Yu. A. Osip'yan, A.I. Shalynin
JETP, 1985, Vol. 61, No. 1, p. 182

PDF (196.6K)

20. Influence of dislocations on the densities and mobilities of light and heavy holes in p-type InSb single crystals at 77.4 $^{\circ}$ K

A.P. Krasnov, Yu. A. Osip'yan
JETP, 1981, Vol. 54, No. 4, p. 723

PDF (409.3K)

21. Concerning the annealing of a dislocation EPR signal in silicon

M.N. Zolotukhin, V.V. Kveder, Yu. A. Osip'yan
JETP, 1981, Vol. 54, No. 1, p. 160

PDF (387.6K)

22. Investigation of dislocations in silicon by the photo-ESR method

V.V. Kveder, Yu. A. Osip'yan
JETP, 1981, Vol. 53, No. 3, p. 618

PDF (299.6K)

23. Kinetics of transmutation doping as a method of deep-center spectroscopy in germanium

Yu. A. Osip'yan, V.M. Prokopenko, V.I. Tal'yanskii
JETP, 1984, Vol. 60, No. 1, p. 156

PDF (225.7K)

24. Spin-dependent recombination on dislocation dangling bonds in silicon

V.V. Kveder, Yu. A. Osip'yan, A.I. Shalynin
JETP, 1982, Vol. 56, No. 2, p. 389

PDF (483.3K)

25. Influence of hydrogen on dislocation donor and acceptor states

M.N. Zolotukhin, V.V. Kveder, Yu. A. Osip'yan
JETP, 1982, Vol. 55, No. 6, p. 1189

PDF (290.8K)

26. Interaction of dislocations with hydrogen and oxygen in silicon

Yu. A. Osip'yan, A.M. Rtishchev, E.A. Shteinman, E.B. Yakimov, N.A. Yarykin
JETP, 1982, Vol. 55, No. 2, p. 294

PDF (195.2K)

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