Comparison between Si/SiO₂ and InP/Al₂O₃ based mosfets
Akbari Tochaei A., Arabshahi H., Benam M.R., Vatan-Khahan A.V., Abedininia M.

Received: January 1, 2016

DOI: 10.7868/S0044451016110000

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Electron transport properties of InP-based MOSFET as a new channel material with Al₂O₃ as a high-k dielectric oxide layer in comparison with Si-based MOSFET are studied by the ensemble Monte Carlo simulation method in which the conduction band valleys in InP are based on three valley models with consideration of quantum effects (effective potential approach). I_d-V_d characteristics for Si-based MOSFET are in good agreement with theoretical and experimental results. Our results show that I_d of InP-based MOSFET is about 2 times that of Si-based MOSFET. We simulated the diagrams of longitudinal and transverse electric fields, conduction band edge, average electron velocity, and average electron energy for Si-based MOSFET and compared the results with those for InP-based MOSFET. Our results, as was expected, show that the transverse electric field, the conduction band edge, the electron velocity and the electron energy in a channel in the InP-based MOSFET are greater than those for Si-based MOSFET. But the longitudinal electric field behaves differently at different points of the channel.