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ZhETF, Vol. 104, No. 3, p. 3126 (September 1993)
(English translation - JETP, Vol. 77, No. 3, p. 465, September 1993 )

The issue content is only available in english translation.

Anomalies in the structural and electrical properties of the amorphous semiconductor a-GaSb:Ge
V.V. Brazhkin, A.G. Lyapin, S.V. Popova, S.V. Demishev, Yu. V. Kosichkin, D.G. Lunts, N.E. Sluchanko, S.V. Frolov

Received: March 10, 1993

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