JETP, Vol. 77,
No. 3,
p. 465 (September 1993)
(Russian original - ZhETF,
Vol. 104,
No. 3,
p. 3126,
September 1993
)
Anomalies in the structural and electrical properties of the amorphous semiconductor a-GaSb:Ge
V.V. Brazhkin, A.G. Lyapin, S.V. Popova, S.V. Demishev, Yu. V. Kosichkin, D.G. Lunts, N.E. Sluchanko, S.V. Frolov
Received: March 10, 1993
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