THERMAL CORRECTION TO RESISTIVITY IN DILUTE Si-MOSFET TWO-DIMENSIONAL SYSTEMS
Cheremisin M.V.

Поступила в редакцию: 15 Апреля 2003

PACS: 73.40.Qv, 71.30.+h, 73.20.Fz

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15 April 2003} 24 April 2004} Neglecting electron-electron interactions and quantum interference effects, we calculate the classical resistivity of a two-dimensional electron (hole) gas taking the degeneracy and the thermal correction due to the combined Peltier and Seebeck effects into account. The resistivity is found to be a universal function of the temperature, expressed in the units of (h/e²)(k_Fl)^-1. Analysis of the compressibility and thermopower points to the thermodynamic nature of the metal-insulator transition in two-dimensional systems. We reproduce the beating pattern of Shubnikov - de Haas oscillations in both the crossed field configuration and Si-MOSFET valley splitting cases. The consequences of the integer quantum Hall effect in a dilute Si-MOSFET two-dimensional electron gas are discussed. The giant parallel magnetoresistivity is argued to result from the magnetic-field-driven disorder.