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Search publications of "I.D. Yaroshetskii"
Found 16 record(s)

1. Breakdown in Transparent Dielectrics Caused by Intense Laser Radiation

B.M. Ashkinadze, V.I. Vladimirov, V.A. Likhachev, S.M. Ryvkin, V.M. Salmanov, I.D. Yaroshetskii
JETP, 1966, Vol. 23, No. 5, p. 788

2. The Effect of Stimulated Free-carrier Absorption on Two-photon Photoconductivity in Semiconductors

A.V. Danishevskii, A.A. Patrin, S.M. Ryvkin, I.D. Yaroshetskii
JETP, 1969, Vol. 29, No. 5, p. 781

3. Investigation of the Laser Effect in CO₂ During Pulsed Excitation

A.M. Danishevskii, I.M. Fishman, I.D. Yaroshetskii
JETP, 1969, Vol. 28, No. 3, p. 421

4. Collective Properties of Excitons in Silicon

B.M. Ashkinadze, I.P. Kretsu, S.M. Ryvkin, I.D. Yaroshetskii
JETP, 1970, Vol. 31, No. 2, p. 271

5. Influence of a Magnetic Field on the Drag of Free Carriers by Photons in Semiconductors

P.M. Valov, A.M. Danishevskii, I.D. Yaroshetskii
JETP, 1971, Vol. 32, No. 3, p. 394

6. Dragging of Electrons by Photons in Intraband Absorption of Light by Free Cerriers in Semiconductors

P.M. Valov, A.M. Danishevskii, A.A. Kastal'skii, B.S. Ryvkin, S.M. Ryvkin, I.D. Yaroshetskii
JETP, 1971, Vol. 32, No. 6, p. 1038

7. Magnetic-field-induced photovoltaic effect in p-type gallium arsenide

A.V. Andrianov, E.V. Beregulin, Yu. B. Lyanda-Geller, I.D. Yaroshetskii
JETP, 1992, Vol. 75, No. 5, p. 921

8. Tunneling, accompanying plasma reflection of radiation, in metal-semiconductor junctions with a self-consistent Schottky barrier

S.D. Ganichev, K. Yu. Glukh, I.N. Kotel'nikov, N.A. Mordovets, A. Ya. Shul'man, I.D. Yaroshetskii
JETP, 1992, Vol. 75, No. 3, p. 495

9. Exciton luminescence kinetics in silicon under the conditions of injection of a phonon pulse

N.N. Zinov'ev, D.I. Kovalev, V.I. Kozub, I.D. Yaroshetskii
JETP, 1994, Vol. 79, No. 2, p. 321

10. Quantum-interference resonant photocurrent

A.P. Dmitriev, S.A. Emel'yanov, Ya. V. Terent'ev, I.D. Yaroshetskii
JETP, 1991, Vol. 72, No. 2, p. 347

11. Bound-exciton Auger recombination induced by acoustic phonons

B.L. Gel'mont, N.N. Zinov'ev, D.I. Kovalev, V.A. Kharchenko, I.D. Yaroshetskii, I.N. Yassievich
JETP, 1988, Vol. 67, No. 3, p. 613

12. Kinetics of nonequilibrium acoustic phonons in a thin semiconductor sample

N.N. Zinov'ev, D.I. Kovalev, V.I. Kozub, I.D. Yaroshetskii
JETP, 1987, Vol. 65, No. 4, p. 746

13. Impact ionization in semiconductors under the influence of the electric field of an optical wave

S.D. Ganichev, A.P. Dmitriev, S.A. Emel'yanov, Ya. V. Terent'ev, I.D. Yaroshetskii, I.N. Yassievich
JETP, 1986, Vol. 63, No. 2, p. 256

14. Linear photovoltaic effect in p-type gallium arsenide

A.V. Andrianov, E.L. Ivchenko, G.E. Pikus, R. Ya. Rasulov, I.D. Yaroshetskii
JETP, 1981, Vol. 54, No. 6, p. 1105

15. Exciton diffusion and the mechanism of exciton momentum scattering in semiconductors

N.N. Zinov'ev, L.P. Ivanov, I.G. Lang, S.T. Pavlov, A.V. Prokaznikov, I.D. Yaroshetskii
JETP, 1983, Vol. 57, No. 6, p. 1254

16. Exciton transport by nonequllibrium phonons and its effect on recombination radiation from semiconductors at high excitation levels

N.N. Zinov'ev, L.P. Ivanov, V.I. Kozub, I.D. Yaroshetskii
JETP, 1983, Vol. 57, No. 5, p. 1027

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