INFRARED PHOTOLUMINESCENCE FROM GeSi NANOCRYSTALS EMBEDDED IN A GERMANIUM-SILICATE MATRIX
Volodin V.A., Gambaryan M.P., Cherkov A.G., Vdovin V.I., Stoffel M., Rinnert H., Vergnat M.

Received: April 24, 2015

DOI: 10.7868/S0044451015120160

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We investigate the structural and optical properties of GeO/SiO₂ multilayers obtained by evaporation of GeO₂ and SiO₂ powders under ultrahigh vacuum conditions on Si(001) substrates. Both Raman and infrared absorption spectroscopy measurements indicate the formation of GeSi nanocrystals after post-growth annealing at 800 . High-resolution transmission electron microscopy characterizations show that the average size of the nanocrystals is about 5 nm. For samples containing GeSi nanocrystals, photoluminescence is observed at 14 K in the spectral range 1500-1600 nm. The temperature dependence of the photoluminescence is studied.