ZhETF, Vol. 142,
p. 542 (September 2012)
(English translation - JETP,
Vol. 115, No. 3,
available online at www.springer.com
MAGNETORESISTIVITY IN A TILTED MAGNETIC FIELD IN p- Si/SiGe/Si HETEROSTRUCTURES WITH AN ANISOTROPIC g-FACTOR. PART II
Drichko I.L., Smirnov I.Yu., Suslov A.V., Mironov O.A., Leadley D.R.
Received: October 25, 2011
The magnetoresistance components ρxx and ρxy were measured in two p- Si/SiGe/Si quantum wells that have an anisotropic g-factor in a tilted magnetic field as a function of the temperature, field, and tilt angle. Activation energy measurements demonstrate the existence of a ferromagnetic-paramagnetic (F-P) transition for the sample with the hole density p=2• 1011 cm-2. This transition is due to the crossing of the and Landau levels. However, in another sample, with p=7.2• 1010 cm-2, the and Landau levels coincide for angles θ=0-. Only for do the levels start to diverge which, in turn, results in the energy gap opening.