JETP, Vol. 49,
No. 2,
p. 304 (February 1979)
(Russian original - ZhETF,
Vol. 76,
No. 2,
p. 607,
February 1979
)
Ionization of impurity centers by hot Auger electrons and characteristics of charge relaxation process in compensated gallium arsenide
Yu. V. Vorob'ev, A.G. II'yashenko, M.K. Sheinkman
Received: July 18, 1978
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