Fabrication and study of the memristor crossbar array
Samsonova A., Yegiyan S., Klimenko O., Antonov V.N., Paradezhenko G., Prodan D., Pervishko A., Yudin D., Brilliantov N.

Поступила в редакцию: 22 Февраля 2024

DOI: 10.31857/S004445102408011X

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We study the formation of the conductive channels in α -Si memristors and demonstrate their operation in the crossbar array. The latter can be utilised as the basic component of the neuromorphic chip tailored for edge computing. The conductive channels in α -Si are formed by the migration of Ag along with Cu ions. Such a channel has switching current-voltage characteristics at high bias, V_biasbias<0.5V. Memristor can be re-programmed to different resistance states with short voltage pulses of amplitude above 2 V. We demonstrate the programming of the memristor crossbar array and its operation in vector-by-matrix multiplication with an 87% accuracy.