TUNNELING CONDUCTANCE OF THE GRAPHENE SNS JUNCTION WITH A SINGLE LOCALIZED DEFECT
Bolmatov D., Chung-ty Mou

Поступила в редакцию: 21 Июля 2009

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Using the Dirac-Bogoliubov-de Gennes equation, we study the electron transport in a graphene-based superconductor-normal(graphene)-superconductor (SNS) junction. We consider the properties of tunneling conductance through an undoped strip of graphene with heavily doped superconducting electrodes in the dirty limit . We find that the spectrum of Andreev bound states is modified in the presence of a single localized defect in the bulk. The minimum tunneling conductance remains the same, and this result is independent of the actual location of the imperfection.