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ЖЭТФ, Том 143, Вып. 1, стр. 191 (Январь 2013)
(Английский перевод - JETP, Vol. 116, No 1, p. 166, January 2013 доступен on-line на www.springer.com )

STRUCTURAL, ELECTRICAL, AND THERMOELECTRICAL PROPERTIES OF ( Bi1-x Sbx)2 Se3 ALLOYS PREPARED BY A CONVENTIONAL MELTING TECHNIQUE
Shokr E.Kh., Ibrahim E.M.M., Abdel Hakeem A.M., Adam A.M.

Поступила в редакцию: 18 Июня 2012

DOI: 10.7868/S0044451013010191

DJVU (168.3K) PDF (907K)

Polycrystalline solid solutions of ( Bi1-x Sbx)2 Se3 (x=0, 0.025, 0.050, 0.075, 0.100) were prepared using a facile method based on the conventional melting technique followed by annealing process. X-ray analysis and Raman spectroscopical measurements revealed formation of Bi2 Se3 in single phase. The electrical and thermoelectric properties have been studied on the bulk samples in the temperature range 100-420 K. The electrical conductivity measurements show that the activation energy and room-temperature electrical conductivity dependences on the Sb content respectively exhibit minimum and maximum values at x=0.05. The thermoelectric power exhibited a maximum value near the room temperature suggesting promising materials for room-temperature applications. The highest power factor value was found to be 13.53 μ W•K-2•cm-1 and recorded for the x=0.05 compound.

 
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